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| inchange semiconductor isc product specification isc silicon pnp power transistor 2SB812 description collector-emitter breakdown voltage- : v (br)ceo = -60v(min) high power dissipation complement to type 2sd1032 applications designed for af power amplifier applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current-continuous -4 a i cm collector current-peak -8 a p c collector power dissipation @ t c =25 60 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB812 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -30ma; i b = 0 -60 v v ce (sat) collector-emitter saturation voltage i c = -4a; i b = -0.4a b -1.5 v v be (on) base -emitter on voltage i c = -3a; v ce = -4v -2.0 v i ceo collector cutoff current v ce = -30v; i b = 0 b -700 a i ces collector cutoff current v ce = -60v; v be = 0 -400 a h fe-1 dc current gain i c = -1a; v ce = -4v 40 250 h fe-2 dc current gain i c = -3a; v ce = -4v 15 switching times t on turn-on time 0.2 s t off turn-off time i c = -4a, i b1 = -i b2 = -0.4a 1.4 s ? h fe- 1 classifications r q p 40-90 70-150 120-250 isc website www.iscsemi.cn 2 |
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